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Power Electronics and Devices Day

Thursday, November 12 | 9:30 am - 1:00 pm
EU Digital Future Forum, Hall C2

Growing adoption of electric vehicles along with the rising trend of lightweight vehicles has been a key driver for power semiconductor devices, including diodes, silicon-controlled rectifiers (SCRs), thyristors, power MOSFETs, and many others used for control and conversion of electric power. Recent progress in the wide-band-gap semiconductor such as GaN and SiC, combined with traditional Si-based insulated gate bipolar transistors (IGBTs) and MOSFETs offers multiple choices for system designers of each specific application.

This forum will bring together experts from both academia and industry providing a comprehensive view of power devices, technologies and applications.



Steering STC (Semiconductor Technology Committee) Members

  • Michael Arnold, PEER Group
  • Erich Biermann, Robert Bosch GmbH
  • Patrick Bressler, Fraunhofer Gesellschaft
  • Joerg Stephan, Fraunhofer Gesellschaft
  • Pietro Cantu, STMicroelectronics
  • Bernie D. Capraro, Intel
  • Johan Dekoster, imec

  • Karl Hornik, Infineon
  • Winfried Kaiser, Zeiss
  • Gabriel Kittel, X-FAB
  • Wilfried Lerch, SkyLark.Solutions
  • Didier Louis, CEA-Leti
  • Philippe Monnoyer, VTT
  • Laurent Pain, CEA-Leti

  • Thomas Passler, Applied Materials
  • Markus Pfeffer, Fraunhofer IISB
  • Ionut Radu, Soitec
  • Stephan Raithel, DAS Environmental Expert 
  • Fred Roozeboom, TU Eindhoven
  • Hessel Sprey, ASM International



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