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Symposium of the ALD-Lab Dresden 2015

 

Symposium of the ALD-Lab 2015

Workshop on Atomic Layer Processing

Date: 6 October 2015
Time: 09:00 - 15:10
Location: Room Columbus, Messe Dresden
 

Organized by:

 

Looking back in the evolution of IC technology, it can be stated that from the 0.25µm node on, the key for further shrinking was planarization. This was enabled by the introduction of an emerging technology, the CMP. Since the 28 nm node it can be observed that, at least in the front end of line, starting with the FinFET and possibly continuing with the surrounding gate transistor, the required structures become more and more three dimensional, while the thickness of the associated films become extremely thin (gate dielectric, work function layer, barrier layer). The emerging technology enabling this is Atomic Layer Deposition (ALD).

ALD is based on self limiting heterogeneous chemical reactions which allow the fabrication of very thin (sub nm to few nm) layers with high accuracy (basically atomic layer precision), extremely well conformality and intrinsically high uniformity even in batch tools. Although the scientific background of ALD goes far back in history, ALD for semiconductor processing can still be considered as a novel technology.
Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology.
The self limiting behavior of the heterogeneous reaction can however also be used to remove material from a substrate in an extremely controlled fashion of atomic dimensions. This process, that can be viewed as the complement to ALD is called Atomic Layer Etching (ALEt). As for ALD also ALEt can be a game changer for the semiconductor industry utilizing surface functionalization and modification similar to those we know in ALD and resulting in a chemistry-based material removal on the same atomic level as in ALD – A layer by layer removal.
In general scaling is thought about to be a shrink in the critical dimensions (CD, pitch) in the latheral xy-plane, today scaling is also taking place in the z-direction, i.e.,  a reduction in the thickness of the film stacks like the High-k Metal Gate stack. This has resulted in that the thicknesses of the film stacks of devices today are now routinely approaching <20 Å nm providing an opportunity for slow and precise etching by ALEt.
We hope that this new part of the ALD Lab Dresden Symposium will allow for increased scientific and technological discussion for enabling ALEt and learning from ALD and related plasma based processing techniques like Plasma CVD and Reactive Ion Etching.

 

 

 

AGENDA

 Tuesday, 6 October 2015

   

 

 09:00 Welcome

Organized by:


 

Supported by:

 

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Prof. Johann W. Bartha, TU Dresden
 
 09:15 In situ monitoring of Atomic Layer Deposition in porous materials
Martin Knaut, TU Dresden
 
 09:40 Passivation of MEMS by Atomic Layer Deposition
Matthias Schwille, Robert Bosch
 
 10:05 Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition
Dileep Dhakal, TU Chemnitz/FhG ENAS
 
 10:30 High-k dielectrics by ALD for BEOL compatible MIM
Wenke Weinreich, FhG IPMS-CNT
 
 10:55 ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
  Mario Krug, FhG IKTS
 
 11:20 ALD for solar cell application
  Ingo Dirnstorfer, NaMLab
 
 11:45 Plasma enhanced ALD process for TiO2- and WO3- films
Alexander Strobel, FH Zwickau
 
 12:10 Lunch Break (Conversation, Networking, Finger food)
 
 13:00 Why do we need Atomic Layer Etching
Jonas Sundqvist, Lund University/TU Dresden
 
 13:25 Spatial Atomic Layer Deposition and Atomic Layer Etching
Prof. Fred Roozeboom, TU Eindhoven
 
 13:50 Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
Harm Knoops, Oxford Instruments/TU Eindhoven
 
 14:15 Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes
Stephan Wege, Plasway
 
 14:40 Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation
Jacques Kools, Encapsulix
 
 15:05 Closing Remarks / Wrap Up
Prof. Johann W. Bartha, TU Dresden
 
 15:10 End
 

Registration

No pre-registration required but you must register as a visitor, in order to gain access to the venue:
 
 
 
 
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