New Materials/Unit Process Steps

Wednesday, 8 October, 13:30–17:00
ICS—International Congress Center, Stuttgart, Germany

Semiconductor innovation is becoming more and more dependent on new materials research. Without these new materials “more Moore” scaling would have stopped already, and “more than Moore” diversification into different functionalities on top of a CMOS baseline would be impossible. In this session, technology leaders from the materials and applications development will present recent progress on groundbreaking materials innovations, ranging from new substrates and Hf-based CMOS gate stacks, to new materials for robust NVMs and nanotube fabrication.

Session Chair:

• Tom Beens, Umicore

Agenda:

• Atomic Layer Deposition, from R&D into a Multitude of Volume Production Applications
  Jan Willem Maes, ASM Europe
• Power Dissipation in Doped SbTe Phase Change Material in Memory Cells
  Rob Wolters, NXP
• Engineered Substrates: Enabling Solutions for “More Moore” and “More than Moore”
  Bruno Ghyselen, Soitec
• Nanostructure Growth Processes for Semiconductor Applications
  Mike Cooke, Oxford Instruments

Who should attend
Process development engineers from the critical materials suppliers and semiconductor process community

Price	Valid through 26 September	Beginning 27 September
SEMI Members	€150	€250
Non-Members	€200	€250