New Materials Session
Date: 11 October Time: 10:30 - 13:30 Location: TechARENA 1, Messe Dresden
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Since the late 1990’s the introduction rate of new materials in the semiconductor industry accelerated substantially. Innovations that have enabled the industry to follow Moore’s law include, for example, copper and low-k, through SiGe, SOI, and high-k with metal gates. | |
Session Agenda
| Chairman: | Fabrice Letertre, VP, Corporate R&D, Soitec |
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| 10:30 | New Material Challenges in 32nm Gate First High K Module |
| Falk Graetsch, Principal Member Technical Staff, GLOBALFOUNDRIES | |
| 10:50 | MaxCaps – Next Generation Dielectrics for Integrated Capacitors |
| Guenther Ruhl, Principal New Materials, Infineon | |
| 11:10 | Materials for Next Generation Phase Change Memories |
| Mauro Alessandri, Technology Development Manager, Micron | |
| 11:30 | Organic and Oxide Transistors and their Application in Flexible Displays, Memories and Circuits |
| Gerwin Geelinck, Program Manager, Holst | |
| 11:50 | FD SOI for Low Power System on Chip |
| Michel Haond, Program Manager, STMicroelectronics | |
| 12:10 | Graphene - Prospects and Potential for Future Applications |
| Daniel Neumaier, Head of Carbon-Electronics Group, AMO | |
Exhibitor Presentations | |
| 12:30 | Hafnium -based Gate Dielectrics for High Performance Logic CMOS Applications |
| Torben Kelwing, Group Functional Electronic Materials, Fraunhofer CNT | |
| 12:45 | Engineered Substrates for Enhanced Growth of III-Nitride Semiconductors |
| Eric Pabo, Business Development Manager, EV Group | |
Who should attend?
The session’s focus will be on the end-users implementing the new materials in the fab, but a comprehensive picture of the whole materials value chain will be provided by including selected contributions from other participants in the value chain as well.




